High-power laser diode bar on a microchannel cooler
Semiconductor
R
cond
=
0.0875 K/W
Solder to submount
R
contact
=
0.0125 K/W
Spreading in submount
R
spread
=
0.15 K/W
Indium layer
R
contact
=
0.008 K/W
Microchannel water
R
conv
=
0.045 K/W
q
=
20 W
TEC pumps heat
q
pump
=
60 W
Baseplate to air
R
conv
=
0.23 K/W
q
=
100 W
Waste heat
P
d
=
80 W
Emitting face
q″
e
=
800 W/cm²
TEC electrical power
P
tec
=
40 W
Diode junction
T
j
=
65 °C
AuSn solder joint
T
sol
=
58 °C
CuW submount
T
sm
=
51 °C
Submount base
Cooler body
T
cb
=
41 °C
Channel water
T
w
=
18 °C
TEC hot face
T
h
=
48 °C
Ambient air
T
amb
=
25 °C